%0 Journal Article
%T Microwave-induced resistance oscillations as a classical memory effect
%+ A.F. Ioffe Physical-Technical Institute
%+ Laboratoire Charles Coulomb (L2C)
%A Beltukov, Y. M.
%A Dyakonov, Michel
%Z 6 pages, 3 figures. Réf Journal: Phys. Rev. Lett. 116, 176801 (2016)
%< avec comité de lecture
%Z L2C:16-121
%@ 0031-9007
%J Physical Review Letters
%I American Physical Society
%V 116
%N 17
%P 176801
%8 2016
%D 2016
%Z 1602.07524
%R 10.1103/PhysRevLett.116.176801
%Z Physics [physics]/Condensed Matter [cond-mat]/Mesoscopic Systems and Quantum Hall Effect [cond-mat.mes-hall]Journal articles
%X By numerical simulations and analytical studies, we show that the phenomenon of microwave-induced resistance oscillations can be understood as a classical memory effect caused by re-collisions of electrons with scattering centers after a cyclotron period. We develop a Drude-like approach to magneto-transport in presence of a microwave field, taking account of memory effects, and find an excellent agreement between numerical and analytical results, as well as a qualitative agreement with experiment.
%G English
%2 https://hal.science/hal-01360270/document
%2 https://hal.science/hal-01360270/file/1602.07524.pdf
%L hal-01360270
%U https://hal.science/hal-01360270
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021