%0 Conference Proceedings
%T Characterization of Integrated Antenna-Coupled Plasma-Wave Detectors With Wide Bandwidth Amplification in 130nm CMOS
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%+ Laboratoire Charles Coulomb (L2C)
%A Nahar, Shamsun
%A Blink, Stephane
%A Pénarier, Annick
%A Coquillat, Dominique
%A Knap, Wojciech
%A Hella, Mona M.
%< avec comité de lecture
%Z L2C:15-268
%( IEEE MTT-S International Microwave Symposium
%B 2015 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS)
%C Phoenix, AZ, United States
%P 1
%8 2015
%D 2015
%R 10.1109/MWSYM.2015.7166950
%K THz imaging
%K THz communications
%K wide bandwidth amplification
%K Plasma-wave detector
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X A fully integrated 0.3 THz antenna-coupled plasma-wave detector with 10 GHz (measured) bandwidth is presented. Fabricated in 130nm CMOS technology, the chip is formed of an E-shaped patch antenna, plasmonic based Field Effect Transistor (FET) detector and a wide bandwidth amplifier employing inductive shunt peaking. The open drain mode of operation of the detector achieves an absolute responsivity of 10 V/W with a minimum signal to noise ratio (SNR) of 40 dB over the entire bandwidth. With a drain current of 0.24 mA, the responsivity increases by 10X with a decrease in bandwidth to 3 GHz. The detector is also characterized without the on chip amplifier for imaging applications and shows a measured absolute responsivity of 150 V/W for a drain current of 5 μA at 0.3 THz.
%G English
%L hal-01293240
%U https://hal.science/hal-01293240
%~ CNRS
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021