%0 Conference Paper
%F Oral 
%T Optical properties of hexagonal boron nitride
%+ Laboratoire Charles Coulomb (L2C)
%A Cassabois, Guillaume
%A Valvin, Pierre
%A Gil, Bernard
%F Invité
%< sans comité de lecture
%Z L2C:15-258
%B 11th International Conference on Nitride Semiconductors (ICNS11)
%C Beijing, China
%8 2015-08-31
%D 2015
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X In this paper, I will review our recent results demonstrating that hBN has an indirect bandgap at 5.9 eV. I will show that the optical properties of hBN are profoundly determined by phonon-assisted transitions with a mirror symmetry between emission and absorption around the indirect exciton at 5.9 eV (Figure 1). I will provide a comprehensive analysis of the emission spectrum in the deep ultraviolet in terms of phonon-assisted transitions involving either virtual or real excitonic states, the latter being provided by structural defects. I will finally point out the complex relaxation dynamics of the quantum gas formed by the reservoir of indirect excitons.
%G English
%L hal-01281931
%U https://hal.science/hal-01281931
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021