%0 Journal Article
%T One-dimensional exciton luminescence induced by extended defects in nonpolar GaN/(Al,Ga)N quantum wells.
%+ Institute of Condensed Matter Physics [Lausanne]
%+ Institut de Photonique et d'Electronique Quantiques
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Interdisciplinary Center for Electron Microscopy (CIME)
%A Dussaigne, Amélie
%A Corfdir, Pierre
%A Levrat, Jacques
%A Zhu, T
%A Martin, Denis
%A Lefebvre, Pierre
%A Ganière, Jean-Daniel
%A Deveaud-Plédran, Benoit
%A Grandjean, Nicolas
%A Arroyo, Y.
%A Stadelmann, P.
%Z Swiss National Science Foundation through Quantum Photonics NCCR and Projects 119840 and 122294.
%< avec comité de lecture
%@ 0268-1242
%J Semiconductor Science and Technology
%I IOP Publishing
%V 26
%N 2
%P 025012
%8 2010-12-24
%D 2010
%R 10.1088/0268-1242/26/2/025012
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Physics [physics]/Physics [physics]/Optics [physics.optics]
%Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
%Z Engineering Sciences [physics]/Optics / PhotonicJournal articles
%X In this study, we present the optical properties of nonpolar GaN/(Al,Ga)N single quantum wells (QWs) grown on either a- or m-plane GaN templates for Al contents set below 15%. In order to reduce the density of extended defects, the templates have been processed using the epitaxial lateral overgrowth technique. As expected for polarization-free heterostructures, the larger the QW width for a given Al content, the narrower the QW emission line. In structures with an Al content set to 5 or 10%, we also observe emission from excitons bound to the intersection of I1-type basal plane stacking faults (BSFs) with the QW. Similarly to what is seen in bulk material, the temperature dependence of BSF-bound QW exciton luminescence reveals intra-BSF localization. A qualitative model evidences the large spatial extension of the wavefunction of these BSF-bound QW excitons, making them extremely sensitive to potential fluctuations located in and away from BSF. Finally, polarization-dependent measurements show a strong emission anisotropy for BSF-bound QW excitons, which is related to their one-dimensional character and that confirms that the intersection between a BSF and a GaN/(Al,Ga)N QW can be described as a quantum wire.
%G English
%L hal-01260924
%U https://hal.science/hal-01260924