%0 Journal Article
%T Strain-compensated (Ga,In)N/(Al,Ga)N/GaN multiple quantum wells for improved yellow/amber light emission
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire Charles Coulomb (L2C)
%+ Physique de l'Exciton, du Photon et du Spin (PEPS)
%A Lekhal, K.
%A Damilano, B.
%A Ngo, H. T.
%A Rosales, Daniel
%A de Mierry, P.
%A Hussain, S.
%A Vennegues, P.
%A Gil, Bernard
%< avec comité de lecture
%Z L2C:15-215
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 106
%N 14
%P 142101
%8 2015-04-06
%D 2015
%R 10.1063/1.4917222
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X XE examine the impact of the heterostructure design at the scale of the structural and optical properties for yellow light emission
%G English
%L hal-01238729
%U https://hal.science/hal-01238729
%~ UNICE
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ ANR
%~ CRHEA
%~ UM-2015-2021