%0 Conference Paper
%F Oral 
%T Midwave infrared InAs/GaSb superlattice photodiode with a dopant-free p-n junction
%+ Institut d’Electronique et des Systèmes (IES)
%+ Composants à Nanostructure pour le moyen infrarouge (NANOMIR)
%+ Laboratoire Charles Coulomb (L2C)
%+ ONERA - The French Aerospace Lab [Palaiseau]
%A Delmas, M.
%A Rodriguez, J. B.
%A Taalat, R.
%A Konczewicz, Leszek
%A Desrat, Wilfried
%A Contreras, Sylvie
%A Giard, E.
%A Ribet-Mohamed, I.
%A Christol, Philippe
%< avec comité de lecture
%Z L2C:15-183
%3 Infrared Physics & Technology
%B 8th International Workshop on Quantum Structure Infrared Photodetectors (QSIP)
%C Santa Fe, United States
%I Elsevier
%V 70
%P 76-80
%8 2014-06-29
%D 2014
%R 10.1016/j.infrared.2014.09.036
%K InAs/GaSb superlattice
%K Photodiode
%K Dark current
%K Midwave infrared
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X Midwave infrared (MWIR) InAs/GaSb superlattice (SL) photodiode with a dopant-free p–n junction was fabricated by molecular beam epitaxy on GaSb substrate. Depending on the thickness ratio between InAs and GaSb layers in the SL period, the residual background carriers of this adjustable material can be either n-type or p-type. Using this flexibility in residual doping of the SL material, the p–n junction of the device is made with different non-intentionally doped (nid) SL structures. The SL photodiode processed shows a cut-off wavelength at 4.65 μm at 77 K, residual carrier concentration equal to 1.75 × 1015 cm−3, dark current density as low as 2.8 × 10−8 A/cm2 at 50 mV reverse bias and R0A product as high as 2 × 106 Ω cm2. The results obtained demonstrate the possibility to fabricate a SL pin photodiode without intentional doping the pn junction.
%G English
%L hal-01216731
%U https://hal.science/hal-01216731
%~ ONERA
%~ CNRS
%~ IES
%~ L2C
%~ ONERA-SACLAY
%~ UNIV-PARIS-SACLAY
%~ MIPS
%~ UNIV-MONTPELLIER
%~ COMUE-UPSACLAY
%~ UM-2015-2021
%~ TEST3-HALCNRS