%0 Journal Article
%T Graphene growth on AlN templates on silicon using propane-hydrogen chemical vapor deposition
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%+ Laboratoire Charles Coulomb (L2C)
%A Michon, A.
%A Tiberj, Antoine
%A Vezian, S.
%A Roudon, E.
%A Lefebvre, D.
%A Portail, M.
%A Zielinski, M.
%A Chassagne, T.
%A Camassel, Jean
%A Cordier, Y.
%< avec comité de lecture
%Z L2C:14-304
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics (AIP)
%V 104
%N 7
%P 071912
%8 2014-02-17
%D 2014
%R 10.1063/1.4866285
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X While the integration of graphene on semiconductor surfaces is important to develop new applications, epitaxial graphene has only been integrated on SiC substrates or 3C-SiC/Si templates. In this work, we explore the possibility of growing graphene on AlN/Si(111) templates. Using a chemical vapor deposition process with propane as the carbon source, we have obtained graphitic films (from 2 to 10 graphene layers) on AlN/Si(111) while preserving the morphology of the AlN layer beneath the graphitic film. This study is an important step for the integration of graphene with semiconductors other than SiC.
%G English
%L hal-01200742
%U https://hal.science/hal-01200742
%~ UNICE
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM-2015-2021