%0 Journal Article
%T AlGaN/GaN HEMT's photoresponse to high intensity THz radiation
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%+ Photonique THz - IEMN (PHOTONIQUE THZ - IEMN)
%+ Puissance - IEMN (PUISSANCE - IEMN)
%A Diakonova, Nina
%A But, Dmytro
%A Coquillat, Dominique
%A Knap, Wojciech
%A Drexler, C.
%A Olbrich, P.
%A Karch, J.
%A Schafberger, M.
%A Ganichev, S. D.
%A Ducournau, Guillaume
%A Gaquière, Christophe
%A Poisson, M. -A.
%A Delage, S.
%A Cywinski, G.
%A Skierbiszewski, C.
%< avec comité de lecture
%Z L2C:15-128
%@ 1230-3402
%J Opto-Electronics Review
%I Springer Verlag (Germany)
%V 23
%N 3
%P 195-199
%8 2015-09
%D 2015
%R 10.1515/oere-2015-0026
%K terahertz
%K photoresponse
%K HEMT
%K ALGaN/GaN
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Journal articles
%X We report on the photoresponse dependence on the terahertz radiation intensity in ALGaN/GaN HEMTs. We show that the ALGaN/GaN HEMT can be used as a THz detector in CW and in pulsed regime up to radiation intensity of several kW/cm2. The dynamic range in the pulsed regime of detection can be more than 2 decades. We observed that the photoresponse of the HEMT could have a compound composition if two independent parts of the transistor are involved in the detection process; this result indicates that a more simple one channel device may be preferable on the detection purpose.
%G English
%L hal-01190762
%U https://hal.science/hal-01190762
%~ CNRS
%~ UNIV-VALENCIENNES
%~ IEMN
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-LILLE
%~ UM-2015-2021
%~ TEST-UPHF