%0 Conference Proceedings
%T Temperature-Dependence of Exciton Radiative Recombination in (Al,Ga)N/GaN Quantum Wells Grown on a-Plane GaN Substrates
%+ Institut de Physique de la Matière Condensée (EPFL)
%+ Department of Physics, Cavendish Laboratory
%+ Institute of High Pressure Physics [Warsaw] (IHPP)
%+ Institute of Physics [Warsaw] (IFPAN)
%+ Laboratoire Charles Coulomb (L2C)
%A Corfdir, Pierre
%A Dussaigne, Amelie
%A Teisseyre, Henryk
%A Suski, Tadeusz
%A Grzegory, Izabella
%A Lefebvre, Pierre
%A Giraud, Etienne
%A Shahmohammadi, Mehran
%A Phillips, Richard T.
%A Ganiere, Jean-Daniel
%A Grandjean, Nicolas
%A Deveaud, Benoit
%Z Swiss National Science Foundation - Project No. 129715.Polish National Science Center (Project DEC-2011/03/B/ST3/02647).
%< avec comité de lecture
%Z L2C:13-384
%( Japanese Journal of Applied Physics
%B International Workshop on Nitride semiconductors.
%C Sapporo, Japan
%I Japan Society of Applied Physics
%3 Recent Advances in Nitride Semiconductors
%V 52
%N 8S
%P 08JC01
%8 2012-10-14
%D 2012
%R 10.7567/JJAP.52.08JC01
%Z PACS : 71.35.-y, 81.15.Hi, 81.07.St, 81.05.Ea
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X This article presents the dynamics of excitons in a-plane (Al,Ga)N/GaN single quantum wells of various thicknesses grown on bulk GaN substrates. For all quantum well samples, recombination is observed to be predominantly radiative in the low-temperature range. At higher temperatures, the escape of charge carriers from the quantum well to the (Al,Ga)N barriers is accompanied by a reduction in internal quantum efficiency. Based on the temperature-dependence of time-resolved photoluminescence experiments, we also show how the local disorder affects the exciton radiative lifetime at low temperature and the exciton non-radiative lifetime at high temperature.
%G English
%L hal-01179181
%U https://hal.science/hal-01179181
%~ CNRS
%~ OPENAIRE
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021