Growth, structure and optoelectronic characterizations of high quality Cu2ZnSnS4 thin films obtained by close spaced vapor transport
Résumé
High quality Cu2ZnSnS4 (CZTS) thin films, as an absorber layer for thin films solar cell, were synthesized successfully using a simple and low cost technique, Close-Space Vapor Transport (CSVT). The films were grown on soda-lime glass substrates using a polycrystalline CZTS ingot as source of evaporation material. Influence of substrate temperature on chemical composition, morphological, structural, electrical and optical properties of the CZTS thin films was investigated using scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD), Raman spectroscopy, UV-Vis-NIR spectrophotometer, Hall effect and photoluminescence (PL) measurements. The results from XRD and Raman characterization confirmed the formation of kesterite CZTS thin films with a (112) plane preferred orientation and Raman shift of 338 cm-1, respectively. When the substrate temperature was increased from 460 to 540 °C, the composition of the thin films becomes Cu-, Sn-poor and Zn-rich, wherein the optical band gap values increased from 1.34 to 1.52 eV. PL spectra show the presence of broad emission band at 1.28 eV. All CZTS thin films exhibit p-type conductivity. With substrate temperature of 500 °C, the CZTS thin films show the best properties as an absorber layer in thin film solar cell (Eg = 1.48 eV, p = 3.4 x1017 cm-3, ρ = 2.6 Ω/cm, μ = 6.4 cm/V.s).