%0 Journal Article %T Near-infrared gallium nitride two-dimensional photonic crystal platform on silicon %+ Institut d'électronique fondamentale (IEF) %+ Nanophysique et Semiconducteurs (NPSC) %+ Laboratoire Charles Coulomb (L2C) %+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA) %A Roland, Iännis %A Zeng, Y. %A Han, Z. %A Checoury, X. %A Blin, C. %A El Kurdi, M. %A Ghrib, A %A Sauvage, Stéphane %A Gayral, B. %A Brimont, Christelle %A Guillet, Thierry %A Semond, F. %A Boucaud, Philippe %< avec comité de lecture %Z L2C:14-282 %@ 0003-6951 %J Applied Physics Letters %I American Institute of Physics %V 105 %P 011104 %8 2014-07-07 %D 2014 %R 10.1063/1.4887065 %Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles %X We demonstrate a two-dimensional free-standing gallium nitride photonic crystal platform operating around 1550 nm and fabricated on a silicon substrate. Width-modulated waveguide cavities are integrated and exhibit loaded quality factors up to 34 000 at 1575 nm. We show the resonance tunability by varying the ratio of air hole radius to periodicity, and cavity hole displacement. We deduce a 7.9 dB/cm linear absorption loss for the suspended nitride structure from the power dependence of the cavity in-plane transmission. %G English %2 https://hal.science/hal-01130613/document %2 https://hal.science/hal-01130613/file/Near_infrared_gallium.pdf %L hal-01130613 %U https://hal.science/hal-01130613 %~ CEA %~ UNICE %~ UGA %~ CNRS %~ UNIV-PSUD %~ INPG %~ L2C %~ INAC-SP2M %~ DSM-INAC %~ UNIV-PARIS-SACLAY %~ UNIV-PSUD-SACLAY %~ MIPS %~ UNIV-MONTPELLIER %~ UNIV-COTEDAZUR %~ CEA-DRF %~ IRIG %~ CEA-GRE %~ ANR %~ PHELIQS %~ CRHEA %~ UM-2015-2021