%0 Conference Proceedings
%T Advances on MBE Selective Area Growth of III- Nitride nanostructures: from nanoLEDs to pseudo substrates.
%+ Departamento de Ingeniería Electrónica and ISOM (ETSI Telecomunicacion)
%+ Escuela Técnica Superior de Ingenieros de Telecomunicación [Madrid] (ETSI)
%+ Laboratoire Charles Coulomb (L2C)
%+ Paul-Drude-Institut für Festkörperelektronik (PDI)
%+ Otto-von-Guericke-Universität Magdeburg = Otto-von-Guericke University [Magdeburg] (OVGU)
%+ Centre de recherche sur l'hétéroepitaxie et ses applications (CRHEA)
%A Albert, S.
%A Bengoechea-Encabo, A.
%A Barbagini, F.
%A López-Romero, D.
%A Sanchez-García, M. A.
%A Calleja, E.
%A Lefebvre, Pierre
%A Kong, Xiang
%A Jahn, U.
%A Trampert, A.
%A Müller, M.
%A Bertram, F.
%A Schmidt, G.
%A Veit, P.
%A Petzold, S.
%A Christen, J.
%A Mierry, P. De
%A Zuñiga-Perez, J.
%Z Ministère espagnol de la recherche, projets : CAM/P2009/ESP-1503 and MICINN MAT2011-26703.
%F Invité
%< avec comité de lecture
%( International Journal of High Speed Electronics and Systems
%B Workshop on Frontier Electronics - WOFE.
%C San Juan, Puerto Rico
%I World Scientific Publishing Company
%V 23
%N 3 & 4
%P 1450020
%8 2013-12-17
%D 2013
%R 10.1142/S0129156414500207
%K coalescence.
%K pseudo substrates
%K semi-polar
%K non-polar
%K core-shell
%K single color emission
%K white-light emission
%K photoluminescence
%K LED
%K GaN
%K InGaN
%K nanostructures
%K Selective area growth
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
%Z Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
%Z Engineering Sciences [physics]/Optics / PhotonicConference papers
%X The aim of this work is to provide an overview on the recent advances in the selective area growth (SAG) of (In)GaN nanostructures by plasma assisted molecular beam epitaxy, focusing on their potential as building blocks for next generation LEDs.The first three sections deal with the basic growth mechanisms of GaN SAG and the emission control in the entire ultraviolet to infrared range, including approaches for white light emission, using InGaN disks and thick segments on axial nanocolumns. SAG of axial nanostructures is developed on both GaN/sapphire templates and GaN-buffered Si(111).As an alternative to axial nanocolumns, section 4 reports on the growth and characterization of InGaN/GaN core-shell structures on an ordered array of top-down patterned GaN microrods. Finally, section 5 reports on the SAG of GaN, with and without InGaN insertion, on semi-polar (11-22) and non-polar (11-20) templates. Upon SAG the high defect density present in the templates is strongly reduced as indicated by a dramatic improvement of the optical properties. In the case of SAG on nonpolar (11-22) templates, the formation of nanostructures with a low aspect ratio took place allowing for the fabrication of high-quality, non-polar GaN pseudo-templates by coalescence of these nanostructures.
%G English
%L hal-01081163
%U https://hal.science/hal-01081163
%~ UNICE
%~ CNRS
%~ OPENAIRE
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-COTEDAZUR
%~ CRHEA
%~ UM-2015-2021