%0 Journal Article
%T Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells
%+ Laboratoire Charles Coulomb (L2C)
%+ Physique de l'Exciton, du Photon et du Spin (PEPS)
%+ Department of Electrical and Computer Engineering
%A Rosales, Daniel
%A Gil, Bernard
%A Bretagnon, Thierry
%A Guizal, Brahim
%A Izyumskaya, N
%A Monavarian, M
%A Zhang, F
%A Okur, Serdal
%A Avrutin, Vitaly
%A Ozgur, Umit
%A Morkoc, Hadis
%< avec comité de lecture
%Z L2C:14-146
%@ 0021-8979
%J Journal of Applied Physics
%I American Institute of Physics (AIP)
%V 116
%P 093517
%8 2014-09-05
%D 2014
%R 10.1063/1.4894513
%K wide band gap semiconductors nitrides
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Journal articles
%X Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm−2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.
%G English
%L hal-01061676
%U https://hal.science/hal-01061676
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ ANR
%~ UM-2015-2021