Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells

Daniel Rosales (1, 2) , Bernard Gil (1, 2) , Thierry Bretagnon (1, 2) , Brahim Guizal (1, 2) , N Izyumskaya , M Monavarian , F Zhang , Serdal Okur (3) , Vitaly Avrutin (3) , Umit Ozgur (3) , Hadis Morkoc (3)

1 L2C - Laboratoire Charles Coulomb
2 PEPS - Physique de l'Exciton, du Photon et du Spin
3 Department of Electrical and Computer Engineering

Optical properties of GaN/Al0.2Ga0.8N multiple quantum wells grown with semi-polar (10-11) orientation on patterned 7°-off Si (001) substrates have been investigated. Studies performed at 8 K reveal the in-plane anisotropic behavior of the QW photoluminescence (PL) intensity for this semi-polar orientation. The time resolved PL measurements were carried out in the temperature range from 8 to 295 K to deduce the effective recombination decay times, with respective radiative and non-radiative contributions. The non-radiative component remains relatively weak with increasing temperature, indicative of high crystalline quality. The radiative decay time is a consequence of contribution from both localized and free excitons. We report an effective density of interfacial defects of 2.3 × 1012 cm−2 and a radiative recombination time of τloc = 355 ps for the localized excitons. This latter value is significantly larger than those reported for the non-polar structures, which we attribute to the presence of a weak residual electric field in the semi-polar QW layers.

Mots clés: wide band gap semiconductors nitrides

Domaines: Autre [cond-mat.other]

Daniel Rosales, Bernard Gil, Thierry Bretagnon, Brahim Guizal, N Izyumskaya, et al.. Recombination dynamics of excitons with low non-radiative component in semi-polar (10-11)-oriented GaN/AlGaN multiple quantum wells. Journal of Applied Physics, 2014, 116, pp.093517. ⟨10.1063/1.4894513⟩. ⟨hal-01061676⟩