%0 Conference Proceedings
%T High-performance room-temperature THz nanodetectors with a narrowband antenna
%+ Laboratoire Charles Coulomb (L2C)
%A Viti, L.
%A Coquillat, Dominique
%A Ercolani, D.
%A Knap, Wojciech
%A Sorba, L.
%A Vitiello, M.
%< avec comité de lecture
%Z L2C:14-122
%( ERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS VII Book Series: Proce
%B TERAHERTZ, RF, MILLIMETER, AND SUBMILLIMETER-WAVE TECHNOLOGY AND APPLICATIONS VII
%C San Francicco, United States
%V 8985
%P 89850W
%8 2014-02-04
%D 2014
%R 10.1117/12.2040529
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We report on the development of a novel class of nanowire-based THz detectors in which the field effect transistor (FET) is integrated in a narrow-band antenna. When the THz field is applied between the gate and the source terminals of the FET, a constant source-to-drain photovoltage appears as a result of the non-linear transfer characteristic of the transistor. In order to achieve attoFarad-order capacitance we fabricate lateral gate FET with gate widths smaller than 100 nm. Our devices show a maximum responsivity of 110 V/W without amplification, with noise equivalent power levels <= 1 nW/root Hz at room temperature. The 0.3 THz resonant antenna has bandwidth of similar to 10 GHz and opens a path to novel applications of our technology including metrology, spectroscopy, homeland security, biomedical and pharmaceutical applications. Moreover the possibility to extend this approach to relatively large multi-pixel arrays coupled with THz sources makes it highly appealing for a future generation of THz detectors.
%G English
%L hal-01056398
%U https://hal.science/hal-01056398
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021