Thermally-stimulated emission analysis of bismuth-doped silica fibers

S. Jain (1) , Jean Bernard Duchez (2) , Yasmine Mebrouk (2) , M.M.A.N Velazquez (3) , Franck Mady (4) , Bernard Dussardier (2) , Mourad Benabdesselam (4) , J.K Sahu (3)

1 ORC - Optoelectronic Research Center
2 LPMC - Laboratoire de physique de la matière condensée
3 ORC - Optoelectronic Research Centre
4 LPMC - Laboratoire de physique de la matière condensée

The study of Bismuth (Bi)-doped silica fibers has been performed by using thermally stimulated luminescence. The thermo-luminescence peaks have been spectrally resolved in order to observe the effect of co-dopants on Bi luminescence. A new TSL peak around 625K was observed for the first time in Bi-doped Al-Ge-silicate fibers. This peak is believed to be due to Bi-active centers, and was only observed in Bi-doped samples co-doped with both Al and Ge.

Domaines: Optique / photonique

S. Jain, Jean Bernard Duchez, Yasmine Mebrouk, M.M.A.N Velazquez, Franck Mady, et al.. Thermally-stimulated emission analysis of bismuth-doped silica fibers. Optical Materials Express, 2014, 4 (7), pp.1361-1366. ⟨10.1364/OME.4.001361⟩. ⟨hal-01053776⟩