Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.

Kassem Alassaad (1) , Véronique Soulière (1) , François Cauwet (1) , Hervé Peyre (2) , Davy Carole (1) , Pawel Kwasnicki (2) , Sandrine Juillaguet (2) , Thomas Kups (3) , Jörg Pezoldt (4) , Gabriel Ferro (1)

1 LMI - Laboratoire des Multimatériaux et Interfaces
2 L2C - Laboratoire Charles Coulomb
3 Institut für Mikro- und Nanotechnologien
4 Institut für Mikro- und Nanotechnologien

In this work, we report on the addition of GeH4 gas during homoepitaxial growth of 4H-SiC by chemical vapour deposition. Ge introduction does not affect dramatically the surface morphology and defect density though it is accompanied with Ge droplets accumulation at the surface. The Ge incorporation level inside the 4H-SiC matrix, ranging from few 1017 to few 1018 at.cm-3, was found to be mainly affected by the growth temperature and GeH4 flux. Other growth parameters like C/Si ratio, polarity, or off-orientation did not show any significant influence. On the other hand, adding GeH4 led to the increase of the intentional n type doping level by a factor of 2 to 5 depending on the C/Si ratio in the gas phase.

Mots clés: 4H-SiC; GeH4; Ge incorporation; In situ; ALCHEMI

Domaines: Matériaux; Electronique; Science des matériaux [cond-mat.mtrl-sci]

Kassem Alassaad, Véronique Soulière, François Cauwet, Hervé Peyre, Davy Carole, et al.. Ge incorporation inside 4H-SiC during Homoepitaxial growth by chemical vapor deposition.. Acta Materialia, 2014, 75, pp.219-226. ⟨10.1016/j.actamat.2014.04.057⟩. ⟨hal-01023271⟩