%0 Conference Proceedings
%T Polarized time-resolved photoluminescence measurements of m-plane AlGaN/GaN MQWs
%+ Laboratoire Charles Coulomb (L2C)
%+ Virginia Commonwealth University (VCU)
%+ Kyma Technologies Inc. (KYMATECH)
%A Rosales, Daniel
%A Gil, Bernard
%A Bretagnon, Thierry
%A Zhang, Fan
%A Okur, Serdal
%A Monaravian, Mortezza
%A Nizioumskaia, Natalya
%A Avrutin, Vitaly
%A Ozgur, Umit
%A Morkoc, Hadis
%A Leach, Jakob
%< avec comité de lecture
%Z L2C:13-327
%( Proceedings of Conference on Gallium Nitride Materials and Devices IX SPIE PHOTONIC WEST
%B SPIE PHOTONIC WEST
%C sann francisco, United States
%V Proceedings of SPIE , 8986,
%P Proceedings of SPIE , 8986, Article Number: 89860L
%8 2014-02-02
%D 2014
%R 10.1117/12.2036984
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X The optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on m-plane oriented substrate are studied in 8K–300K temperature range. The optical spectra reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature-dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations. © (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
%G English
%Z ANR GASIOPHE
%L hal-01021314
%U https://hal.science/hal-01021314
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ ANR
%~ UM-2015-2021