%0 Conference Paper
%F Oral 
%T Excitonic recombination dynamics in non-polar and semi-polar AlGaN/GaN multiple QWs
%+ Laboratoire Charles Coulomb (L2C)
%A Rosales, Daniel
%A Gil, Bernard
%A Bretagnon, Thierry
%A Guizal, Brahim
%A Fan, Zhang
%A Okur, Serdal
%A Monavarian, Mortezza
%A Izyumskaya, Natalia
%A Avrutin, Vitaly
%A Ozmur, Umit
%A Morkoc, Hadis
%A Leach, Jakob
%< avec comité de lecture
%Z L2C:14-067
%B 5th International symposium on growth on nitrides
%C France
%8 2014-05-25
%D 2014
%K nitrides
%Z Physics [physics]/Condensed Matter [cond-mat]/Other [cond-mat.other]Conference papers
%X We compare the optical properties of GaN/Al0.15Ga0.85N multiple quantum wells grown on an m-plane (10-10) oriented GaN substrate with those of (1-101)-oriented GaN/Al0.15Ga0.85N multiple quantum wells grown by metal-organic chemical vapor deposition on a patterned (001) 7°-off oriented silicon substrate. The optical properties are studied in 8K-300K temperature range. They reveal strong in-plane optical anisotropies as predicted by group theory. Polarized time resolved temperature- dependent photoluminescence experiments are performed providing access to the relative contributions of the non-radiative and radiative recombination processes. We deduce the variation of the radiative decay time with temperature in the two polarizations. A global comparison of the light emission efficiency in both samples is finally addressed and brought in agreement with the predictions of k.p calculations.
%G English
%Z ANR GASIOPHE
%L hal-01021275
%U https://hal.science/hal-01021275
%~ CNRS
%~ L2C
%~ USART
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021