%0 Journal Article
%T Ultrahigh sensitive sub-terahertz detection by InP-based asymmetric dual-grating-gate high-electron-mobility transistors and their broadband characteristics
%+ Research Institute of Electrical Communication [Sendai] (RIEC)
%+ Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN)
%+ Laboratoire Charles Coulomb (L2C)
%+ Departamento de Fisica Aplicada
%+ Kotelnikov Institute of Radio Engineering and Electronics (IRE)
%A Kurita, Y.
%A Ducournau, Guillaume
%A Coquillat, D.
%A Satou, A.
%A Kobayashi, K.
%A Boubanga-Tombet, S.
%A Meziani, Y.M.
%A Popov, V.V.
%A Knap, W.
%A Suemitsu, T.
%A Otsuji, T.
%< avec comité de lecture
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 104
%N 25
%P 251114
%8 2014
%D 2014
%R 10.1063/1.4885499
%K plasmons
%K MODFETs
%K terahertz detectors
%K photoelectric conversion
%K biosensors
%Z Engineering Sciences [physics]/Electronics
%Z Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]Journal articles
%X We report on room-temperature plasmonic detection of sub-terahertz radiation by InAlAs/InGaAs/InP high electron mobility transistors with an asymmetric dual-grating-gate structure. Maximum responsivities of 22.7 kV/W at 200 GHz and 21.5 kV/W at 292 GHz were achieved under unbiased drain-to-source condition. The minimum noise equivalent power was estimated to be 0.48 pW/Hz0.5 at 200 GHz at room temperature, which is the record-breaking value ever reported for plasmonic THz detectors. Frequency dependence of the responsivity in the frequency range of 0.2-2 THz is in good agreement with the theory.
%G English
%2 https://hal.science/hal-01018293/document
%2 https://hal.science/hal-01018293/file/Kurita_2014_1.4885499.pdf
%L hal-01018293
%U https://hal.science/hal-01018293
%~ CNRS
%~ UNIV-VALENCIENNES
%~ IEMN
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UNIV-LILLE
%~ UM-2015-2021
%~ TEST3-HALCNRS