VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion. - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Nanotechnology Année : 2014

VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.

Résumé

We report on the growth and microstructure analysis of high Cd content ZnCdO/ZnO multiple quantum wells (MQW) within a nanowire. Heterostructures consisting of ten wells with widths from 0.7 to 10nm are demonstrated, and show photoluminescence emissions ranging from 3.03 to 1.97eV. The wells with thicknesses⩽2nm have high radiative efficiencies compared to the thickest ones, consistent with the presence of quantum confinement. However, a nanometric analysis of the Cd profile along the heterostructures shows the presence of Cd diffusion from the ZnCdO well to the ZnO barrier. This phenomenon modifies the band structure and the optical properties of the heterostructure, and is considered in order to correctly identify quantum effects in the ZnCdO/ZnO MQWs.
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Dates et versions

hal-01009919 , version 1 (18-06-2014)

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Manuel Lopez-Ponce, A. Nakamura, M. Suzuki, J. Temmyo, S. Agouram, et al.. VIS-UV ZnCdO/ZnO multiple quantum well nanowires and the quantification of Cd diffusion.. Nanotechnology, 2014, 25, pp.255202. ⟨10.1088/0957-4484/25/25/255202⟩. ⟨hal-01009919⟩
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