The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications

Loïc Théolier (1) , Frédéric Morancho (2) , Karine Isoird (2) , Hicham Mahfoz-Kotb (1) , Henri Tranduc (2)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 LAAS - Laboratoire d'analyse et d'architecture des systèmes

New hybrid vehicles will probably use high voltage batteries (150 to 200 Volts). For these future automotive applications, the development of 600 Volts power MOSFET switches exhibiting low on-resistance is desired. The "Deep Trench SuperJunction" MOSFET (DT-SJMOSFET) is one of the new candidates. In this paper, a comparative theoretical study, using 2D simulations, shows that the DT-SJMOSFET should be a challenger to the conventional SJMOSFET in terms of "specific on-resistance / breakdown voltage" trade-off. Simulations of the DT-SJMOSFET breakdown voltage versus the technological parameters exhibit the difficulties to fabricate the device. Finally, an original edge cell is proposed that contains the peripheral potential.

Mots clés: Power semiconductor devices; MOSFET; SuperJunction devices; Simulation

Domaines: Micro et nanotechnologies/Microélectronique

Loïc Théolier, Frédéric Morancho, Karine Isoird, Hicham Mahfoz-Kotb, Henri Tranduc. The DT-SJMOSFET : a new power MOSFET strucure for high-voltage applications. 2nd International Conference on Automotive Power Electronics (APE 2007), Sep 2007, PARIS, France. 8 p. ⟨hal-01002232⟩