HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation

Saleem Hamady (1) , Frédéric Morancho (1) , Bilal Beydoun (2) , Patrick Austin (3) , Mathieu Gavelle (3)

1 LAAS-ISGE - Équipe Intégration de Systèmes de Gestion de l'Énergie
2 GET-LPE
3 LAAS - Laboratoire d'analyse et d'architecture des systèmes

AlGaN/GaN HEMTs are promising candidates for high frequency applications with high power and low noise. While switching applications demand normally-off operation, conventional HEMTs are normally-on. To achieve normally-off HEMTs, several structures have been proposed. One of the major normally-off HEMTs uses fluorine implantation in the AlGaN layer. We suggest in this work the implantation of fluorine ions under the AlGaN/GaN interface only below the gate electrode rather than implanting in the AlGaN layer. Simulation results show that the proposed method is capable of achieving normally-off operation and is more effective when it comes to the fluorine concentration required to obtain a desired threshold voltage

Mots clés: Wide bandgap devices; Gallium Nitride (GaN); High Electron Mobility Transistor (HEMT); Normally-off; TCAD Simulation

Domaines: Electronique

Saleem Hamady, Frédéric Morancho, Bilal Beydoun, Patrick Austin, Mathieu Gavelle. HEMT with fluorine implanted below the AlGaN/GaN interface for normally-off operation. 20th LAAS International Science Conference Advanced Research for Better Tomorrow, Mar 2014, Hadath, Lebanon. ⟨hal-00994826⟩