Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs

E. Simoen (1) , M. Aoulaiche (1) , S.D. dos Santos (2) , J.A. Martino (2) , V. Strobel (3) , Bogdan Cretu (4) , Jean-Marc Routoure (4) , Régis Carin (4) , A. Rodriguez Luque (5) , J.A Jimenez Tajada (5) , C. Claeys (1, 6)

1 IMEC - IMEC
2 LSI/PSI/USP - University of Sao Paulo - Brazil
3 GREYC - Groupe de Recherche en Informatique, Image et Instrumentation de Caen
4 Equipe Electronique - Laboratoire GREYC - UMR6072
5 UGR - Universidad de Granada = University of Granada
6 E.E. Dept - KU Leuven, Kasteelpark Arenberg - Belgium

The low-frequency (LF) noise behavior of Fully Depleted (FD) Ultrathin Buried Oxide (UTBOX) Silicon-on-Insulator (SOI) nMOSFETs is described from the perspective of the three major noise sources: 1/f-like or flicker noise, associated with carrier trapping/detrapping in the gate oxide; Generation-Recombination (GR) noise due to processing-induced defects in the thin silicon film and single-oxide-trap-related Random Telegraph Noise (RTN). The fully depleted nature of the thin silicon films (<20 nm) offers the unique opportunity to study and demonstrate the front-back coupling of the 1/f noise. At the same time, a large variability is induced in the noise magnitude by the Lorentzian noise, associated with GR events through defects in the silicon film. A method to discriminate oxide- from film-defects related Lorentzian noise is pointed out. Finally, the implications for future fully depleted fintype of devices will also be discussed.

Domaines: Sciences de l'ingénieur [physics]; Electronique

E. Simoen, M. Aoulaiche, S.D. dos Santos, J.A. Martino, V. Strobel, et al.. Lessons Learned from Low-Frequency Noise Studies on Fully Depleted UTBOX Silicon-on-Insulator nMOSFETs. ECS Journal of Solid State Science and Technology, 2013, pp.q205-q210. ⟨hal-00994168⟩