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Communication Dans Un Congrès China Semiconductor Technology International Conference (CSTIC 2013) Année : 2013

Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS

Résumé

The impact of different gate dielectrics on the low-frequency (LF) noise behavior is investigated in UTBOX SOI nMOSFETs. Hafnium silicate (HfSiO) devices are compared to silicon dioxide (SiO2) ones in terms of low-frequency noise apart from the analysis of both front and backchannels. Despite the improvement of process steps for obtaining good dielectric layers, high-k devices have shown elevated current noise spectral density due to the higher number of traps which also degrades the front-channel mobility. Although the buried oxide (BOX) of both wafers is formed by thermal SiO2, the strong electrostatic coupling between front and back-channels has resulted in a worse noise performance for high-k devices even at the back interface.
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Dates et versions

hal-00994161 , version 1 (22-07-2014)

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  • HAL Id : hal-00994161 , version 1

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S.D. dos Santos, J.A. Martino, V. Strobel, Bogdan Cretu, Jean-Marc Routoure, et al.. Low-Frequency Noise in High-K and SiO2 UTBOX SOI nMOSFETS. China Semiconductor Technology International Conference, Mar 2013, shangai, China. pp.87-92. ⟨hal-00994161⟩
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