A 2.4GHz to 6GHz Active Balun in GaN Technology

Victor Dupuy (1) , Eric Kerhervé (2) , Nathalie Deltimple (2) , Benoit Mallet-Guy (3) , Yves Mancuso (3) , Patrick Garrec (4)

1 /Conception/CSH
2 IMS - Laboratoire de l'intégration, du matériau au système
3 THALES Airborne Systems [Elancourt]
4 Thales Airborne Systems

This article presents a S-C band active balun in a GaN integrated technology. Based on a differential pair this circuit realizes the single to differential conversion. Moreover this circuit can be used as preamplifier to drive a power stage. It delivers more than 25dBm in each differential path in the [2,4GHz-6GHz] band with a maximum of 29dBm at 3.8GHz. The chip has been realized in the UMS GH25 process, a GaN HEMT technology with a 0.25µm gate length

Domaines: Electronique

Victor Dupuy, Eric Kerhervé, Nathalie Deltimple, Benoit Mallet-Guy, Yves Mancuso, et al.. A 2.4GHz to 6GHz Active Balun in GaN Technology. ICECS 2013, Dec 2013, Abu Dhabi, United Arab Emirates. pp.637 - 640 10.1109/ICECS.2013.6815495. ⟨hal-00991873⟩