Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI

Olivier Marcelot (1) , Magali Estribeau (1) , Vincent Goiffon (1) , Philippe Martin-Gonthier (1) , Franck Corbière (1) , Romain Molina (1) , Sébastien Rolando (1) , Pierre Magnan (1)

1 DEOS - Département Electronique, Optronique et Signal

This paper presents measurements performed on Charge Coupled Device (CCD) structures manufactured on a deep submicron CMOS imaging technology, in surface channel CCD and in buried channel CCD mode. The charge transfer inefficiency is evaluated for both CCD modes with regard to the injected charge, and the influence of the rising and falling time effect is explored. Controlling the ramp and especially reducing its abruptness allows to get much lower CTI in BCCD mode. In contrary, we did not observe any effect of the ramp on SCCD mode, due to the presence of interface traps at the silicon - oxide interface.

Mots clés: Charge coupled devices; Charge transfer; Charge; Transfer inefficiency; CMOS image sensors (CIS); Deep submicrometer process; Trapped charge

Domaines: Traitement du signal et de l'image [eess.SP]; Traitement du signal et de l'image [eess.SP]

Olivier Marcelot, Magali Estribeau, Vincent Goiffon, Philippe Martin-Gonthier, Franck Corbière, et al.. Study of CCD Transport on CMOS Imaging Technology: Comparison Between SCCD and BCCD, and Ramp Effect on the CTI. IEEE Transactions on Electron Devices, 2014, vol. 61, pp. 844-849. ⟨10.1109/TED.2014.2298693⟩. ⟨hal-00991418⟩