%0 Conference Proceedings
%T Asymmetric Dual-Grating Gate InGaAs/InAlAs/InP HEMTs for Ultrafast and Ultrahigh Sensitive Terahertz Detection
%+ Tohoku University [Sendai]
%+ Groupe d'étude des semiconducteurs (GES)
%+ Laboratoire Charles Coulomb (L2C)
%+ Kotelnikov Institute of Radio Engineering and Electronics (IRE)
%A Otsuji, T
%A Watanabe, Takayuki
%A Boubanga Tombet, Stephane
%A Suemitsu, T.
%A Coquillat, Dominique
%A Knap, Wojciech
%A Fateev, D. V.
%A Popov, V. V.
%< avec comité de lecture
%Z L2C:13-314
%( 2013 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS (IPRM)
%B 25th International Conference on Indium Phosphide and Related Materials (IPRM)
%C Kobe, Japan
%P 1-3
%8 2013-05-19
%D 2013
%K terahertz
%K plasmon
%K detector
%K HEMT
%K grating
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X This paper reviews recent advances in ultrafast and ultrahigh sensitive broadband terahertz detection utilizsing asymmetric double-grating-gate InP-based high-electron-mobility transistors, demonstrating a record responsivity of 2.2 kV/W at 1 THz under drain-unbiased conditions with a superior low noise equivalent power of 15 pW/root Hz and 6.4 kV/W even at 1.5 THz under drain-biased conditions.
%G English
%L hal-00980610
%U https://hal.science/hal-00980610
%~ CNRS
%~ UNIV-MONTP2
%~ GES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM1-UM2
%~ UM-2015-2021