Experimental evidence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0.7Sr0.3MnO3 thin films

Laurence Méchin (1) , Sheng Wu (1) , Bruno Guillet (1) , Paolo Perna (1) , Cédric Fur (1) , Sylvain Lebargy (1) , C. Adamo (2) , D.G. Schlom (2, 3) , Jean-Marc Routoure (1)

1 Equipe Electronique - Laboratoire GREYC - UMR6072
2 Department of Materials Science and Engineering, Cornell University, USA
3 KIC - Kavli Institute at Cornell for Nanoscale Science

The relation between lattice deformation, dc electrical properties and 1/f noise at room temperature was investigated experimentally in two series of high epitaxial La0.7Sr0.3MnO3 (LSMO) thin films of various thicknesses. The first series was deposited on SrTiO3 (0 0 1) single crystal substrates by pulsed laser deposition and the second one on SrTiO3-buffered Si (0 0 1) substrates by reactive-molecular-beam epitaxy. A clear correlation was found between 1/f noise level and the temperature of the metal-to-insulator transition. These findings are important in view of the optimization of LSMO thin films for applications in sensors.

Domaines: Sciences de l'ingénieur [physics]; Micro et nanotechnologies/Microélectronique

Laurence Méchin, Sheng Wu, Bruno Guillet, Paolo Perna, Cédric Fur, et al.. Experimental evidence of correlation between 1/f noise level and metal-to-insulator transition temperature in epitaxial La0.7Sr0.3MnO3 thin films. Journal of Physics D: Applied Physics, 2013, 46, pp.202001. ⟨hal-00977721⟩