%0 Journal Article
%T Quasi-ideal Nonlinear Electrical Behavior of Polycrystalline SnO2 Ceramic Varistors Doped with SiO2
%+ Laboratoire Charles Coulomb (L2C)
%A Metz, Renaud
%A Hassanzadeh, Mehrdad
%A Mahesh, K.V.
%A Ananthakumar, S.
%< avec comité de lecture
%Z L2C:14-020
%@ 0361-5235
%J Journal of Electronic Materials
%I Institute of Electrical and Electronics Engineers (IEEE)
%V 43
%N 5
%P 1411-1418
%8 2014-02-11
%D 2014
%R 10.1007/s11664-014-3035-3
%Z Chemical Sciences/Material chemistryJournal articles
%X The influence of SiO2 doping on the microstructure and electrical behavior of SnO2 varistors has been studied. The varistor effect was studied over a wide range from 10 9 A to 104 A. It is shown that the J(E) characteristic of SnO2 ceramics exhibits a nonlinear coefficient>100. The SiO2 doping also resulted in a sharp-abrupt upturn region in the I-V characteristic, indicating a single semiconductor junction behavior. The leakage current of the varistors is rather low, on the order of 10 10 S m 1. In the upturn region of operation where the curve departs from the nonlinear relation and approaches the value of the bulk resistivity of the material, the ceramic is characterized by a current density almost independent of the applied voltage. A very small amount of SiO2 causes large perturbations of the conventional thermionic emission observed in varistor ceramic materials.
%G English
%L hal-00968930
%U https://hal.science/hal-00968930
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021