Orbital Kondo effect in V-doped 1T-CrSe2 - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Physical Review B: Condensed Matter and Materials Physics (1998-2015) Année : 2013

Orbital Kondo effect in V-doped 1T-CrSe2

Résumé

We have studied the resistance of 1T -CrSe2, as the Cr atoms are substituted by V or Ti. The V replacement leads to a logarithmic increase in the resistance as the temperature is lowered, proportional to the V concentration. While this behavior is consistent with the Kondo effect, the weak dependence of the resistance with magnetic field and the fact that the system has antiferromagnetic order, rule out a Kondo effect due to spin degeneracy. In contrast to the case of V, Ti substitution does not increase the logarithmic term while application of pressure destroys it. Calculations of the electronic structure within the framework of density functional theory, maximally localized Wannier functions, and many-body calculations in a cluster containing a Cr or V atom and its six nearest-neighbor Se atoms, helped to reveal the existence of an orbital Kondo effect due to orbital degeneracy in the V substitutional impurities.
Fichier principal
Vignette du fichier
KONDO-PhysRevB.88.245129.pdf (2.53 Mo) Télécharger le fichier
Origine : Fichiers éditeurs autorisés sur une archive ouverte
Loading...

Dates et versions

hal-00966093 , version 1 (11-04-2014)

Identifiants

Citer

Matias Nunez, Daniele-Cristina Freitas, Frédéric Gay, Jacques Marcus, Pierre Strobel, et al.. Orbital Kondo effect in V-doped 1T-CrSe2. Physical Review B: Condensed Matter and Materials Physics (1998-2015), 2013, 88 (24), pp.245129. ⟨10.1103/PhysRevB.88.245129⟩. ⟨hal-00966093⟩

Collections

UGA CNRS NEEL ANR
177 Consultations
442 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More