%0 Journal Article
%T High performance bilayer-graphene terahertz detectors
%+ National Enterprise for nanoScience and nanoTechnology (NEST)
%+ Laboratoire Charles Coulomb (L2C)
%+ University of Cambridge [UK] (CAM)
%+ Istituto Italiano di Tecnologia (IIT)
%A Spirito, Davide
%A Coquillat, Dominique
%A de Bonis, Sergio L.
%A Lombardo, Antonio
%A Bruna, Matteo
%A Ferrari, Andrea C.
%A Pellegrini, Vittorio
%A Tredicucci, Alessandro
%A Knap, Wojciech
%A Vitiello, Miriam S.
%< avec comité de lecture
%Z L2C:14-016
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 104
%N 6
%P 061111
%8 2014
%D 2014
%Z 1312.3737
%R 10.1063/1.4864082
%Z Physics [physics]/Physics [physics]/Instrumentation and Detectors [physics.ins-det]
%Z Engineering Sciences [physics]/ElectronicsJournal articles
%X We report bilayer-graphene field effect transistors operating as Terahertz (THz) broadband photodetectors based on plasma-waves excitation. By employing wide-gate geometries or buried gate configurations, we achieve a responsivity ∼1.2 V/W (1.3 mA/W) and a noise equivalent power ∼2 × 10−9 W/√Hz in the 0.29-0.38 THz range, in photovoltage and photocurrent mode. The potential of this technology for scalability to higher frequencies and the development of flexible devices makes our approach competitive for a future generation of THz detection systems.
%G English
%2 https://hal.science/hal-00960242/document
%2 https://hal.science/hal-00960242/file/1312.3737.pdf
%L hal-00960242
%U https://hal.science/hal-00960242
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021