%0 Journal Article
%T Plasmonic and bolometric terahertz detection by graphene field-effect transistor
%+ Rensselaer Polytechnic Institute (RPI)
%+ Russian Academy of Sciences [Moscow] (RAS)
%+ University of California [Riverside] (UC Riverside)
%+ Laboratoire Charles Coulomb (L2C)
%A Muraviev, A. V.
%A Rumyantsev, S. L.
%A Liu, G.
%A Balandin, A. A.
%A Knap, Wojciech
%A Shur, M. S.
%< avec comité de lecture
%Z L2C:13-303
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 103
%N 18
%P 181114
%8 2013-10-28
%D 2013
%R 10.1063/1.4826139
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X Polarization dependence analysis of back-gated graphene field-effect transistor terahertz responsivity at frequencies ranging from 1.63 to 3.11 THz reveals two independent mechanisms of THz detection by graphene transistor: plasmonic, associated with the transistor nonlinearity, and bolometric, caused by graphene sheet temperature increase due to THz radiation absorption. In the bolometric regime, electron and hole branches demonstrate a very different response to THz radiation, which we link to the asymmetry of the current-voltage characteristics temperature dependence with respect to the Dirac point. Obtained results are important for development of high-efficiency graphene THz detectors.
%G English
%2 https://hal.science/hal-00954517/document
%2 https://hal.science/hal-00954517/file/Graphene-Plasmonic-APL-2013.pdf
%L hal-00954517
%U https://hal.science/hal-00954517
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021