Electronic properties of E3 electron trap in n-type ZnO

Gauthier Chicot (1) , Julien Pernot (1) , Jean-Louis Santailler (2) , Céline Chevalier (2) , Carole Granier (2) , Pierre Ferret (2) , Alexandre Ribeaud (2) , Guy Feuillet (2) , Pierre Muret (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Deep level transient spectroscopy measurements were per- formed on three non-intentionally doped n-type ZnO samples grown by different techniques in order to investigate the electronic properties of E3 electron trap. The ionization energy and the capture cross-section are found respectively at 0.275 eV from the conduction band and 2.3×10^−16 cm2 with no electric field dependence. This center is present irrespective of the synthesis method. In view of its physical properties and recent works published in the literature, its physical origin is discussed. Based mainly on its insensibility to the macroscopic electric field, the best candidates turn out to be dual defects with opposite charges on adjacent sites, like the dual vacancy VO -VZn .

Mots clés: E3 level; ZnO; DLTS; Deep level

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Gauthier Chicot, Julien Pernot, Jean-Louis Santailler, Céline Chevalier, Carole Granier, et al.. Electronic properties of E3 electron trap in n-type ZnO. physica status solidi (b), 2014, 251 (1), pp.206-210. ⟨10.1002/pssb.201349261⟩. ⟨hal-00936922⟩