%0 Journal Article
%T The effect of a transverse magnetic field on 1/f noise in graphene
%+ Laboratoire Charles Coulomb (L2C)
%A Rumyantsev, S. L.
%A Coquillat, Dominique
%A Ribeiro, R.
%A Goiran, Michel
%A Knap, Wojciech
%A Shur, M. S.
%A Balandin, A. A.
%A Levinshtein, M. E.
%< avec comité de lecture
%Z L2C:13-270
%@ 0003-6951
%J Applied Physics Letters
%I American Institute of Physics
%V 103
%N 17
%P 173114
%8 2013-10-21
%D 2013
%R 10.1063/1.4826644
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Journal articles
%X The low frequency 1/f noise in graphene devices was studied in a transverse magnetic field of up to B = 14 T at temperatures T = 80 K and T = 285 K. The examined devices revealed a large physical magnetoresistance typical for graphene. At low magnetic fields (B < 2 T), the level of 1/f noise decreases with the magnetic field at both temperatures. The details of the 1/f noise response to the magnetic field depend on the gate voltage. However, in the high magnetic fields (B > 2 T), a strong increase of the noise level was observed for all gate biases.
%G English
%L hal-00918350
%U https://hal.science/hal-00918350
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021