Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires

Pierre Tchoulfian (1) , Fabrice Donatini (2) , François Levy (3) , Benoît Amstatt (3) , Amélie Dussaigne (3) , Pierre Ferret (3) , Etienne Bustarret (1) , Julien Pernot (1)

1 NEEL - SC2G - Semi-conducteurs à large bande interdite
2 NEEL - POM - Optique & Microscopies
3 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information

Combined thermoelectric-resistivity measurements and micro-Raman experiments have been performed on single heavily Si-doped GaN wires. In both approaches, similar carrier concentration and mobility were determined taking into account the non-parabolicity of the conduction band. The unique high conductivity of Si-doped GaN wires is explained by a mobility µ=56 cm2 /V s at a carrier concentration n = 2.6 10^20 /cm 3. This is attributed to a more efficient dopant incorporation in Si-doped GaN microwires as compared to Si-doped GaN planar layers. (c) 2013 AIP Publishing LLC.

Mots clés: semiconductors; GaN; nanowires; carrier mobility; Si doping; thermoelectric effect; Raman scattering; carrier concentration

Domaines: Science des matériaux [cond-mat.mtrl-sci]; Micro et nanotechnologies/Microélectronique

Pierre Tchoulfian, Fabrice Donatini, François Levy, Benoît Amstatt, Amélie Dussaigne, et al.. Thermoelectric and micro-Raman measurements of carrier density and mobility in heavily Si-doped GaN wires. Applied Physics Letters, 2013, 103 (20), pp.202101. ⟨10.1063/1.4829857⟩. ⟨hal-00905599⟩