%0 Conference Proceedings
%T Terahertz Detectors Based on Silicon Technology Field Effect Transistors
%+ Laboratoire Charles Coulomb (L2C)
%A Knap, Wojciech
%A Schuster, F.
%A Coquillat, Dominique
%A Teppe, Frederic
%A Giffard, B.
%A But, Dmytro
%A Golenkov, O.
%A Sizov, F.
%< avec comité de lecture
%Z L2C:12-415
%( MRS Proceedings
%B 2012 MRS Spring Meeting - Symposium L - Group IV Photonics for Sensing and Imaging
%C San Francisco, United States
%V 1437
%P l07-04
%8 2012-04-09
%D 2012
%R 10.1557/opl.2012.1187
%K microstructure
%K Si
%K devices
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X The concept of THz detection based on excitation of plasma waves in two-dimensional electron gas in Si FETs is one of the most attractive ones, as it makes possible the development of the large-scale integrated devices based on a conventional microelectronic technology including on-chip antennas and readout devices integration. In this work we report on investigations of Terahertz detectors based on low-cost silicon technology field effect transistors. We show that detectors, consisting of a coupling antenna and a n-MOS field effect transistor as rectifying element, are efficient for THz detection and imaging. We demonstrate that in the atmospheric window around 300 GHz, these detectors can achieve a record noise equivalent power below 10 pW/Hz0.5 and a responsivity above 90 kV/W once integrated with on-chip amplifier. We show also that they can be used in a very wide frequency range: from ∼0.2 THz up to 1.1 THz. THz detection by Si FETs pave the way towards high sensitivity silicon technology based focal plane arrays for THz imaging
%G English
%L hal-00903719
%U https://hal.science/hal-00903719
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021