Terahertz imaging using strained-Si MODFETs as sensors

Y. M. Meziani , E. Garcia-Garcia , J. E. Velazquez-Perez , Dominique Coquillat (1) , Nina Diakonova (1) , Wojciech Knap (1) , I. Grigelionis , K. Fobelets

1 L2C - Laboratoire Charles Coulomb

We report on non-resonant (broadband) and resonant detection of terahertz radiation using strained-Si modulation doped field effect transistors. The devices were excited at room temperature by two types of terahertz sources (an electronic source based on frequency multipliers at 0.292 THz and a pulsed parametric laser at 1.5 THz). In both cases, a non-resonant response with maxima around the threshold voltage was observed. Shubnikov-de Haas and photoresponse measurements were performed simultaneously and showed a phase-shift of pi/2 in good agreement with the theory, which demonstrates that the observed response is related to the plasma waves oscillation in the channel. The non-resonant features were used to demonstrate the capabilities of such devices in terahertz imaging. We also cooled our device down to 4.2 K to increase the quality factor and resonant detection was observed by using a tunable source of terahertz radiation.

Mots clés: Terahertz; SiGe; MODFET; Imaging; Sensors

Domaines: Physique Générale [physics.gen-ph]

Y. M. Meziani, E. Garcia-Garcia, J. E. Velazquez-Perez, Dominique Coquillat, Nina Diakonova, et al.. Terahertz imaging using strained-Si MODFETs as sensors. Solid-State Electronics, 2013, 83, pp.113-117. ⟨10.1016/j.sse.2013.01.030⟩. ⟨hal-00903630⟩