Anisotropic electrical resistivity during annealing of oriented columnar titanium films

Nicolas Martin (1) , Jérémie Sauget (1) , Tomas Nyberg (2)

1 FEMTO-ST - Franche-Comté Électronique Mécanique, Thermique et Optique - Sciences et Technologies (UMR 6174)
2 Solid State Electronics, The Angstrom Laboratory

We report on the evolution of anisotropic electrical resistivity versus temperature of titanium thin films. An oriented titanium film (1 μm thick) is sputter deposited by GLancing Angle Deposition (GLAD) using an incident angle α = 80° of the particle flux. Two parallel Ti electrodes cover this GLAD film. We measure the components of the conductivity tensor by the van der Pauw method during an annealing treatment in air ranging from 298 to 873 K. The average DC electrical resistivity ρ changes from 6.03×10-6 to more than 2.40×10-1 Ωm with the increasing temperature. The anisotropy ratio is A = 1.39 before annealing and reaches 12.4 for the highest temperatures. This enhanced anisotropy is interpreted assuming the oxidation of the porous GLAD titanium film.

Domaines: Micro et nanotechnologies/Microélectronique

Nicolas Martin, Jérémie Sauget, Tomas Nyberg. Anisotropic electrical resistivity during annealing of oriented columnar titanium films. Materials Letters, 2013, 105, pp.20 - 23. ⟨10.1016/j.matlet.2013.04.058⟩. ⟨hal-00875683⟩