%0 Journal Article
%T Nanometer size field effect transistors for terahertz detectors
%+ Laboratoire Charles Coulomb (L2C)
%+ Institut d’Electronique et des Systèmes (IES)
%+ Térahertz, hyperfréquence et optique (TéHO)
%A Knap, Wojciech
%A Rumyantsev, S.
%A Vitiello, M. S.
%A Coquillat, Dominique
%A Blin, Stéphane
%A Diakonova, Nina
%A Shur, M.
%A Teppe, Frederic
%A Tredicucci, A.
%A Nagatsuma, T.
%< avec comité de lecture
%Z L2C:13-168
%@ 0957-4484
%J Nanotechnology
%I Institute of Physics
%V 24
%N 21
%P 214002
%8 2013-05-31
%D 2013
%R 10.1088/0957-4484/24/21/214002
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Journal articles
%X Nanometer size field effect transistors can operate as efficient resonant or broadband terahertz detectors, mixers, phase shifters and frequency multipliers at frequencies far beyond their fundamental cut-off frequency. This work is an overview of some recent results concerning the application of nanometer scale field effect transistors for the detection of terahertz radiation.
%G English
%L hal-00843001
%U https://hal.science/hal-00843001
%~ CNRS
%~ IES
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021