Substrate-controlled allotropic phases and growth orientation of TiO2 epitaxial thin films

V. F. Silva (1) , Valérie Bouquet (1) , Stéphanie Députier (1) , S. Boursicot (1) , Sophie Ollivier (1) , I.T. Weber (2) , V. L. Silva (3) , I. M. G. Santos (4) , Maryline Guilloux-Viry (1) , André Perrin (1)

1 ISCR - Institut des Sciences Chimiques de Rennes
2 Departamento de Quimica Fundamental
3 LEAQ
4 LACOM

TiO2 thin films were grown by pulsed laser deposition on a wide variety of oxide single-crystal substrates and characterized in detail by four-circle X-ray diffraction. Films grown at 873 K on (100)-oriented SrTiO3 and LaAlO3 were (001)-oriented anatase, while on (100) MgO they were (100)-oriented. On (110) SrTiO3 and MgO, (102) anatase was observed. On M-plane and R-plane sapphire, (001)- and (101)-oriented rutile films were obtained, respectively. On C-plane sapphire, the coexistence of (001) anatase, (112) anatase and (100) rutile was found; increasing the deposition temperature tended to increase the rutile proportion. Similarly, films grown at 973 K on (100) and (110) MgO showed the emergence, besides anatase, of (110) rutile. All these films were epitaxically grown, as shown by ' scans and/or pole figures, and the various observed orientations were explained on the basis of misfit considerations and interface arrangement.

Mots clés: itanium oxide; thin films; pulsed laser deposition; epitaxial relations

Domaines: Matériaux

V. F. Silva, Valérie Bouquet, Stéphanie Députier, S. Boursicot, Sophie Ollivier, et al.. Substrate-controlled allotropic phases and growth orientation of TiO2 epitaxial thin films. Journal of Applied Crystallography, 2010, 43, pp.1502-1512. ⟨10.1107/S0021889810041221⟩. ⟨hal-00825767⟩