%0 Conference Proceedings
%T Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors
%+ Laboratoire Charles Coulomb (L2C)
%A Klimenko, Oleg
%A Teppe, Frederic
%A Knap, Wojciech
%A Iniguez, B.
%A Coquillat, Dominique
%A Mityagin, Y. A.
%A Dyakonova, N. V.
%A Videlier, Hadley
%A Lime, F.
%A Marczewski, J.
%A Kucharski, K.
%< avec comité de lecture
%Z L2C:12-373
%( International Conference on Infrared Millimeter and Terahertz Waves
%B 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
%C Wollongong, NSW, Australia
%P 1
%8 2012-09-23
%D 2012
%R 10.1109/IRMMW-THz.2012.6380333
%K FETs
%K Logic gates
%K Plasma temperature
%K Temperature
%K Temperature dependence
%K Temperature measurement
%K field effect transistors
%K terahertz wave detectors
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.
%G English
%L hal-00816972
%U https://hal.science/hal-00816972
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021