Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors

Oleg Klimenko , Frederic Teppe (1) , Wojciech Knap (1) , B. Iniguez , Dominique Coquillat (1) , Y. A. Mityagin , N. V. Dyakonova , Hadley Videlier , F. Lime , J. Marczewski , K. Kucharski

1 L2C - Laboratoire Charles Coulomb

We have measured the Terahertz photoresponse of three types of FETs as a function of the temperature, to study the change of the dominant current mechanism. For all of them we have compared the photoresponse with its DC transfer characteristics, which is directly proportional to the conductivity.

Mots clés: FETs; Logic gates; Plasma temperature; Temperature; Temperature dependence; Temperature measurement; field effect transistors; terahertz wave detectors

Domaines: Physique Générale [physics.gen-ph]

Oleg Klimenko, Frederic Teppe, Wojciech Knap, B. Iniguez, Dominique Coquillat, et al.. Temperature Dependence of Terahertz Radiation Detection by Field Effect Transistors. 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ), Sep 2012, Wollongong, NSW, Australia. pp.1, ⟨10.1109/IRMMW-THz.2012.6380333⟩. ⟨hal-00816972⟩