%0 Conference Proceedings %T Terahertz Imaging Using Strained-Si MODFETs as Sensors %+ Laboratoire Charles Coulomb (L2C) %A Meziani, Y.M %A Garcia-Garcia, E %A Velazquez-Perez, J %A Coquillat, Dominique %A Diakonova, Nina %A Knap, Wojciech %A Grigelionis, I %A Fobelets, K %< avec comité de lecture %Z L2C:12-371 %( Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 International %B International Conference on Silicon-Germanium Technology and Device Meeting (ISTDM), 2012 %C Berkeley, CA, United States %P 1 %8 2012-06-04 %D 2012 %R 10.1109/ISTDM.2012.6222464 %K CMOS image sensors %K Ge-Si alloys %K MOSFET %K bow-tie antennas %K elemental semiconductors %K focal planes %K high electron mobility transistors %K oscillations %K terahertz spectroscopy %K terahertz wave detectors %K terahertz wave imaging %K FETs %K Image sensors %K Logic gates %K Sensors %K Silicon %Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers %X Development of new terahertz (THz) sensors is increasing in interest due to their potential for THz imaging and spectroscopy. One alternative to develop direct THz sensors is based in the oscillation of the plasma waves in the channel of sub-micron FETs.The n-channel Si/SiGe MODFETs used in this study were grown by MBE on a thick relaxed SiGe virtual substrate grown by low-energy PECVD on plain Si wafers. %G English %L hal-00816948 %U https://hal.science/hal-00816948 %~ CNRS %~ L2C %~ MIPS %~ UNIV-MONTPELLIER %~ UM-2015-2021