%0 Conference Proceedings
%T Polarization and Frequency studies of Si MOSFET Terahertz Detectors
%+ Laboratoire Charles Coulomb (L2C)
%A Coquillat, Dominique
%A Schuster, F.
%A Diakonova, Nina
%A Teppe, Frederic
%A Giffard, B.
%A Kopyt, P.
%A Takada, T.
%A Arakawa, K.
%A Hisatake, S.
%A Nagatsuma, T.
%A Knap, Wojciech
%< avec comité de lecture
%Z L2C:12-369
%( International Conference on Infrared Millimeter and Terahertz Waves
%B 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
%C Wollongong, NSW, Australia
%P 1
%8 2012-09-23
%D 2012
%Z 13192253
%R 10.1109/IRMMW-THz.2012.6380118
%K MOSFET
%K antenna radiation patterns
%K bow-tie antennas
%K electromagnetic wave polarisation
%K elemental semiconductors
%K silicon
%K submillimetre wave transistors
%K terahertz wave detectors
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X Test chips with Si MOSFETs integrating bow tie antennas are investigated to check the polarization and frequency dependence of THz sensitivity. The azimuthal angle corresponding to the maximum sensitivity changes with the pixel position on the chip. This means that the surrounding pixels affect the bow tie radiation pattern and possibly contribute to the antenna coupling. The frequency dependence suggests the presence of surface modes phenomena in the silicon substrate.
%G English
%L hal-00816705
%U https://hal.science/hal-00816705
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021