%0 Conference Proceedings
%T Terahertz Rectification by Graphene Field Effect Transistors
%+ Laboratoire Charles Coulomb (L2C)
%A Coquillat, Dominique
%A Diakonova, Nina
%A Goiran, Michel
%A Vitiello, M. S.
%A Vicarelli, L.
%A Poumirol, Jean-Marie
%A Escoffier, Walter
%A Raquet, Bertrand
%A But, Dmytro
%A Teppe, Frederic
%A Pellegrini, V.
%A Tredicucci, A.
%A Knap, Wojciech
%< avec comité de lecture
%Z L2C:12-368
%( International Conference on Infrared Millimeter and Terahertz Waves
%B 2012 37TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
%C Wollongong, NSW, Australia
%P 1
%8 2012-09-23
%D 2012
%Z 13192254
%R 10.1109/IRMMW-THz.2012.6380119
%K carrier density
%K field effect transistors
%K graphene
%K rectification
%K terahertz wave devices
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We demonstrate two different THz rectification mechanisms by graphene field effect transistors: a mesoscopic rectification due to the existence of 2nd-order conductance fluctuations and a rectification mechanism where THz radiation modulates simultaneously carrier velocity and carrier density.
%G English
%L hal-00816693
%U https://hal.science/hal-00816693
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021