%0 Conference Proceedings
%T Antenna-coupled heterostructure field effect transistors for integrated terahertz heterodyne mixers
%+ Laboratoire Charles Coulomb (L2C)
%A Di Gaspare, Alessandra
%A Giliberti, Valeria
%A Casini, Roberto
%A Giovine, Ennio
%A Evangelisti, Florestanto
%A Coquillat, Dominique
%A Knap, Wojciech
%A Sadofev, Sergey
%A Calarco, Raffaella
%A Dispenza, Massimiliano
%A Lanzieri, Claudio
%A Ortolani, Michele
%< avec comité de lecture
%Z L2C:13-089
%( Proc. SPIE 8624, Terahertz, RF, Millimeter, and Submillimeter-Wave Technology and Applications VI, 8
%B SPIE Photonics West 2013
%C San Francisco, United States
%P 862416
%8 2013-02-02
%D 2013
%K Antennas
%K Electrons
%K Fabrication
%K Field effect transistors
%K Gallium nitride
%K Heterodyning
%K Heterojunctions
%K Integrated circuits
%K Polarization
%K Terahertz radiation
%Z Physics [physics]/Physics [physics]/General Physics [physics.gen-ph]Conference papers
%X We present the realization of high electron mobility transistors on GaN-heterostructures usable for mixing and rectification in the THz range. Device fabrication is fully compatible with industrial processes employed for millimetre wave integrated circuits. On-chip, integrated, polarization-sensitive, planar antennas were designed to allow selective coupling of THz radiation to the three terminals of field effect transistors in order to explore different mixing schemes for frequencies well above the cutoff frequency for amplification. The polarization dependence of the spectral response in the 0.18-0.40 THz range clearly demonstrated the possible use as integrated heterodyne mixers
%G English
%L hal-00816559
%U https://hal.science/hal-00816559
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021