%0 Journal Article
%T A 280-GHz Schottky Diode Detector in 130-nm Digital CMOS
%+ Laboratoire Charles Coulomb (L2C)
%A Han, Ruonan
%A Zhang, Yaming
%A Coquillat, Dominique
%A Videlier, Hadley
%A Knap, Wojciech
%A Brown, Elliott
%A Kenneth, K. O.
%< avec comité de lecture
%Z L2C:11-409
%@ 0018-9200
%J IEEE Journal of Solid-State Circuits
%I Institute of Electrical and Electronics Engineers
%V 46
%N 11
%P 2602-2612
%8 2011-11
%D 2011
%R 10.1109/JSSC.2011.2165234
%K CMOS
%K detector
%K imaging
%K NEP
%K on-chip patch antenna
%K responsivity
%K Schottky barrier diode
%K terahertz
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Journal articles
%X A 2 x 2 array of 280-GHz Schottky-barrier diode detectors with an on-chip patch antenna (255 x 250 mu m(2)) is fabricated in a 130-nm logic CMOS process. The series resistance of diode is minimized using poly-gate separation (PGS), and exhibits a cut-off frequency of 2 THz. Each detector unit can detect an incident carrier with 100-Hz similar to 2-MHz amplitude modulation. At 1-MHz modulation frequency, the estimated voltage responsivity and noise equivalent power (NEP) of the detector unit are 250 V/W and 33 pW/Hz(1/2), respectively. An integrated low-noise amplifier further boosts the responsivity to 80 kV/W. At supply voltage of 1.2 V, the entire chip consumes 1.6 mW. The array occupies 1.5 x 0.8 mm(2). A set of millimeter-wave images with a signal-noise ratio of 48 dB is formed using the detector. These suggest potential utility of Schottky diode detectors fabricated in CMOS for millimeter wave and sub-millimeter wave imaging.
%G English
%L hal-00814188
%U https://hal.science/hal-00814188
%~ CNRS
%~ L2C
%~ MIPS
%~ UNIV-MONTPELLIER
%~ UM-2015-2021