Epitaxial PZT thin films on YSZ-buffered Si (001) substrates for piezoelectric MEMS or NEMS applications

Corentin Jorel (1) , Héloïse Colder (2) , Alice Galdi (3, 4, 5) , Laurence Méchin (1)

1 Equipe Electronique - Laboratoire GREYC - UMR6072
2 CRISMAT - Laboratoire de cristallographie et sciences des matériaux
3 GREYC - Groupe de Recherche en Informatique, Image et Instrumentation de Caen
4 UNISA - Università degli Studi di Salerno = University of Salerno
5 CNR - National Research Council of Italy | Consiglio Nazionale delle Ricerche

We report the growth of epitaxial Pb(Zr0.54Ti0.46)O-3 (PZT) thin films on yttria-stabilized zirconia buffered silicon substrates by pulsed laser deposition. We demonstrate a full in plane epitaxy of the buffer layer, showing a RMS roughness of less than 0.3 nm for a 120 nm thick layer. This buffer layer allows the growth of fully (110) textured oxide conducting SrRuO3 and subsequent functional oxide layers. Here the Pb(Zr,Ti)O-3 oxide was chosen to demonstrate its possible integration in piezoelectric microelectromechanical systems on silicon.

Mots clés: Funcitonnal oxide; Silicon; Buffer layer; Epitaxy; Thin films

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Corentin Jorel, Héloïse Colder, Alice Galdi, Laurence Méchin. Epitaxial PZT thin films on YSZ-buffered Si (001) substrates for piezoelectric MEMS or NEMS applications. E-MRS 2012 Spring Meeting, Symposium M: More than Moore: Novel materials approaches for functionalized Silicon based Microelectronics, May 2012, Strasbourg, France. pp.012012, ⟨10.1088/1757-899X/41/1/012012⟩. ⟨hal-00813970⟩