%0 Conference Proceedings
%T Reversible Optical Doping of graphene
%+ Laboratoire Charles Coulomb (L2C)
%+ Centre d'élaboration de matériaux et d'études structurales (CEMES)
%A Tiberj, Antoine
%A Rubio-Roy, Miguel
%A Paillet, Matthieu
%A Huntzinger, Jean-Roch
%A Landois, Périne
%A Mikolasek, Mirko
%A Contreras, Sylvie
%A Sauvajol, Jean-Louis
%A Dujardin, Erik
%A Zahab, Ahmed Azmi
%F Invité
%< avec comité de lecture
%Z L2C:13-081
%B GDR-I GNT 2013
%C Guidel-Plages, Lorient, France
%8 2013-04-08
%D 2013
%Z Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]Conference papers
%X The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. We show in this work that structural and electronic characterization of graphene in air by Raman spectroscopy is significantly affected by the substrate surface cleaning method and moderate laser power conditions. In particular, we demonstrate that the charge carrier density of graphene exfoliated on a SiO2/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. The amplitude of this photo-induced doping is found to require hydrophilic substrates and to vanish in suspended graphene. These findings suggest that optically gated graphene devices operating with a sub-second time scale can be envisioned but also that Raman spectroscopy might not be as non-invasive as generally assumed.
%G English
%L hal-00813854
%U https://hal.science/hal-00813854
%~ UNIV-TLSE3
%~ CNRS
%~ INSA-TOULOUSE
%~ L2C
%~ INC-CNRS
%~ MIPS
%~ UNIV-MONTPELLIER
%~ CEMES
%~ GNS
%~ INSA-GROUPE
%~ TOULOUSE-INP
%~ UNIV-UT3
%~ UT3-INP
%~ UT3-TOULOUSEINP
%~ UM-2015-2021
%~ TEST2-HALCNRS